Electrical properties of Schottky diode Pt/SiC and Pt/porous SiC performed on highly resistif p-type 6H-SiC

被引：14

作者：

Bourenane, K. ^{[1
]}

Keffous, A. ^{[1
]}

Nezzal, G. ^{[1
]}

机构：

[1] UDTS, Algiers, Alger, Algeria

来源：

VACUUM | 2007年 / 81卷 / 05期

关键词：

silicon carbide; Schottky diode; platinum; porous silicon carbide;

D O I：

10.1016/j.vacuum.2006.09.009

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We investigated the electrical characteristics of two different Schottky diode as Pt/SiC and Pt/porous SiC, elaborated on highly resistif hot-pressed p-type 6H-SiC supplied by Goodfellow. The Schottky diode was characterized in air ambient and in vacuum, this latter could be used for exhaust gas monitoring as gas sensors for different gas (O-2, H-2, CO, CO2 and hydrocarbure). The result shows an ideality factor in ranae 1.1-1.5 with a barrier height varying between 0.780 and 0.950eV function of the ambient characterization. The result indicated clearly the dependence of electrical parameters on the surface whose Schottky contact was realized (Pt) and on the ambient where the electrical tests were performed. (c) 2006 Elsevier Ltd. All rights reserved.

引用

页码：663 / 668

页数：6

共 20 条

[1] Excess noise characteristics of hydrogenated amorphous silicon p-i-n photodiode films [J].