Room temperature sensitivity of Ta doped nanocrystalline ZnO films to NH3 exposure

被引:0
作者
Nichev, H. [1 ]
Angelov, O. [1 ]
Kamenova, M. [1 ]
Mikli, V. [2 ]
Dimova-Malinovska, D. [1 ]
机构
[1] Bulgarian Acad Sci, Cent Lab Solar Energy & New Energy Sources, BU-1784 Sofia, Bulgaria
[2] Tallinn Univ Technol, Ctr Mat Res, EE-200108 Tallinn, Estonia
来源
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS | 2009年 / 11卷 / 10期
关键词
Thin films; ZnO; Optical bandgap; Gas sensors; Quartz crystal microbalance; GAS SENSOR; THIN-FILMS; AL; CU;
D O I
暂无
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Undoped (ZnO) and doped with Ta (ZnO:Ta) films have been deposited by magnetron sputtering of a ZnO target and co-sputtering of the target with Ta chips on its surface respectively. The structural and optical properties of the films have been performed by X-ray Diffraction Spectroscopy (XRD), optical transmittance and reflectance measurements. The sensitivity of the undoped ZnO thin films and those doped with Ta (ZnO:Ta) to exposure to NH3 was measured by the ratio of the resistivity in air to that in the presence of the target gas. A higher sensitivity was observed in the Ta doped ZnO film.. It is shown that ZnO thin films doped with Ta have a potential application as room temperature sensors.
引用
收藏
页码:1371 / 1374
页数:4
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