Electrical and Thermal Performance of AlGaN/GaN HEMTs on Diamond Substrate for RF Applications

被引：0

作者：

Dumka, D. C. ^{[1
]}

Chou, T. M. ^{[1
]}

Jimenez, J. L. ^{[1
]}

Fanning, D. M. ^{[1
]}

Francis, D. ^{[2
]}

Faili, F. ^{[2
]}

Ejeckam, F. ^{[2
]}

Bernardoni, M. ^{[3
]}

Pomeroy, J. W. ^{[3
]}

Kuball, M. ^{[3
]}

机构：

[1] TriQuint Semicond Inc, 500 W Renner Rd, Richardson, TX 75080 USA

[2] Element Six Technol, 3901 Burton, Santa Clara, CA 95054 USA

[3] Univ Bristol, HH Wills Phys Lab, Tyndall Ave, Bristol BS8 1TL, Avon, England

来源：

2013 IEEE COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT SYMPOSIUM (CSICS): INTEGRATED CIRCUITS IN GAAS, INP, SIGE, GAN AND OTHER COMPOUND SEMICONDUCTORS | 2013年

关键词：

AlGaN/GaN; GaN-on-diamond; CVD Diamond; HEMT; 10; GHz; RF Power; Electrical; Thermal;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Thermal conductivity of the substrate affects the performance of high power RF devices. It is a dominant limiting factor in current state-of-the-art GaN HEMTs on SiC substrate. Due to high thermal conductivity, diamond substrate is an attractive alternative for GaN HEMTs. We have developed device quality GaN-on-diamond wafers using CVD diamond and fabricated 0.25 mu m gate length HEMTs. We present detailed electrical and thermal results of the fabricated devices, which show RF power comparable to standard GaN-on-SiC HEMTs. We demonstrate over 25 % lower channel temperature for these devices compared to GaN-on-SiC devices. Electrical results using DC and RF tests and thermal results using IR thermography and micro-Raman spectroscopy are included.

引用

页数：4

共 6 条

[1]

Chen SQ, 2012, COMP SEMICOND INTEGR

[2]

Dumka D.C., 2012, GOV MICR APPL CRIT T

[3]

Dumka D.C., 2013, IEE ELECT L IN PRESS

[4] Benchmarking of Thermal Boundary Resistance in AlGaN/GaN HEMTs on SiC Substrates: Implications of the Nucleation Layer Microstructure [J].

Manoi, Athikom ;

Pomeroy, James W. ;

Killat, Nicole ;

Kuball, Martin .

IEEE ELECTRON DEVICE LETTERS, 2010, 31 (12) :1395-1397

[5]

Pomeroy J., 2013, IEEE COMP SEM IC S C

[6]

Wu Y.F., 2006, IEEE 64 DEV RES C, P151

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