Squeeze film damping in the free molecular flow regime with full thermal accommodation

被引:31
作者
Suijlen, M. A. J. [1 ]
Koning, J. J. [2 ]
van Gils, M. A. J. [2 ]
Beijerinck, H. C. W. [1 ]
机构
[1] Eindhoven Univ Technol, Dept Appl Phys, NL-5600 MB Eindhoven, Netherlands
[2] NXP Semicond, Dept Innovat & Technol, NL-6534 AE Nijmegen, Netherlands
关键词
MEMS oscillator; Resonator mode shape; Squeeze film damping; Squeeze film frequency shift; Free molecular flow; Diffusion time; Brownian motion; Random walk; Monte Carlo simulation; Kinetic damping; VACUUM; MODEL; MEMS;
D O I
10.1016/j.sna.2009.03.025
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We introduce an analytical model for the gas damping of a M EMS resonator in the regime of free molecular How. Driving force in this model is the change in density in the gap volume due to the amplitude of the oscillating microstructure, which is counteracted by the random walk diffusion in the gap that tries to restore the density to its equilibrium value. This results in a complex-valued force that contributes to both the damping as well as the spring constant, depending on the value of omega tau with omega the resonance frequency and tau the random walk diffusion time. The diffusion time is calculated analytically using the model for random walk Brownian motion and numerically by a Monte Carlo simulation of the ballistic trajectories of the molecules following Maxwell-Boltzmann statistics and full thermal accommodation in gas-surface collisions. The model is verified by comparison to accurate data on the pressure dependency of the damping of three MEMS resonators, showing agreement within 10%. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码:171 / 179
页数:9
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