Determination of the complex dielectric function of ion implanted amorphous SiC by spectroscopic ellipsometry

Ion-implantation induced disorder changes the complex refractive index of the implanted semiconductor layers. In turn the disorder can be detected by optical methods such as spectroscopic ellipsometry (SE). The prerequisite of the proper interpretation of SE data measured on partially ion damaged SiC is the knowledge of the complex dielectric function of completely ion implanted amorphized SiC. In the present work, the wavelength dependence of the complex dielectric function (epsilon = epsilon(1) + iepsilon(2)) was extracted from data measured by multiple angle of incidence SE in the wavelength range 270-700 nm on ion implantation amorphized SiC.