Evaluate I2t Capability of SiC MOSFETs in Solid State Circuit Breaker Applications

被引：0
作者：
Dong, Zhou [1 ]
Ren, Ren [1 ]
Wang, Fred [1 ,2 ]
机构：
[1] Univ Tennessee, Ctr Ultrawide Area Resilient Elect Energy Transmi, Knoxville, TN 37996 USA
[2] Oak Ridge Natl Lab, Knoxville, TN USA
来源：
2020 IEEE ENERGY CONVERSION CONGRESS AND EXPOSITION (ECCE) | 2020年
基金：
美国国家科学基金会;
关键词：
solid state circuit breaker; i(2)t capability; overload protection; SiC MOSFETs; dynamic thermal impedance;
D O I：
暂无
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
Solid State Circuit Breakers (SSCBs) protect equipment in power systems during short circuit and overload. Evaluating the i(2)t capability of devices can be critical to the overload protection design of the SSCB. Previous methods used the junction-to-case dynamic thermal impedance to estimate the i(2)t capability. However, the overall dynamic thermal impedance can be influenced by the thermal management. In this paper, we investigated the influence of the heatsink on the dynamic thermal performance of the power switch. More importantly, we presented an experimental method to characterize the i(2)t capability of devices under the worst operating condition for the SSCB. The on-resistance of the switch is measured to predict the junction temperature with an improved voltage sensing circuit. Then, by applying over-current pulses with various current levels and pulse lengths, the relationship between the i(2)t value of over-current pulses and the junction temperature rise of the device can be investigated. The presented method has been verified to characterize the i(2)t capability of a SiC power module.
引用
收藏
页码：6043 / 6048
页数：6
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