Cyclic C4F8 and O2 plasma etching of TiO2 for high-aspect-ratio three-dimensional devices

被引：4

作者：

Imamura, Tsubasa ^{[1
,2
]}

Sakai, Itsuko ^{[1
]}

Hayashi, Hisataka ^{[1
]}

Sekine, Makoto ^{[2
]}

Hori, Masaru ^{[2
]}

机构：

[1] Kioxia Corp, Proc Technol Res & Dev Ctr, Yokaichi, Mie 5128550, Japan

[2] Nagoya Univ, Ctr Low Temp Plasma Sci, Nagoya, Aichi 4648603, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2021年 / 60卷 / 03期

关键词：

plasma; RIE; cycle etch; TiO2; CF polymer; MECHANISM; TRIMETHYLALUMINUM; SILICON;

D O I：

10.35848/1347-4065/abdf78

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The present study investigates the cyclic etching of TiO2 with CF polymer deposition and removal. We find that C4F8 plasma treatment forms a CF polymer deposition layer on the TiO2 and a modified TiO2 surface under the CF polymer layer. Subsequent O-2 plasma treatment removes the CF polymer and the modified layer at the same time. This sequence is repeated. Accordingly, the TiO2 film is etched at a rate of 0.67 nm per cycle. The CF polymer and modified TiO2 layer also form on the sidewall TiO2 surface of a trench pattern. We realize the isotropic TiO2 etching of a trench pattern having a high aspect ratio exceeding 40 adopting the cyclic C4F8 and O-2 plasma process.

引用

页数：8

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