Comparative study of Bi overlayers on III-Sb(110) (1x1) surfaces

被引：1
作者：
Gay, SCA
Çakmak, M
Srivastava, GP
机构：
[1] Univ Exeter, Sch Phys, Exeter EX4 4QL, Devon, England
[2] Gazi Univ, Fen Edebiyat Fak, TR-06500 Ankara, Turkey
来源：
SURFACE SCIENCE | 2000年 / 454卷 / 01期
基金：
英国工程与自然科学研究理事会;
关键词：
density functional calculations; epitaxy; gallium antimonide; indium antimonide; surface electronic phenomena (work function; surface potential; surface states; etc.); surface relaxation and reconstruction;
D O I：
10.1016/S0039-6028(00)00182-5
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Using the pseudopotential method and the local density approximation, we present a comparative study of the atomic and electronic structure of a single monolayer deposition of Bi on III-Sb(110)-(1 x 1) surfaces, where III = Al, Ga or In. In this respect, we find that within the epitaxially continued layer structure, Bi/GaSb(110)(1 x 1) is somewhat different from the monolayer coverage of Bi and Sb on III-As(110) and III-P(110) substrates. In particular, the tilt of the Bi chain is reversed for Bi/GaSb(110). The trend in the characteristics of Bi chain on III-Sb(110) surfaces is analysed in terms of the relative atomic sizes and electronegativities of the substrate anion and cation. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：26 / 29
页数：4
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