A microscopic "toy" model of ferroelectric negative capacitance

被引:0
作者
Hoffmann, Michael [1 ]
Ravindran, Prasanna Venkatesan [2 ]
Khan, Asif Islam [2 ,3 ]
机构
[1] NaMLab gGmbH TU Dresden, Dresden, Germany
[2] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA
[3] Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
来源
2020 IEEE ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM 2020) | 2020年
基金
美国国家科学基金会;
关键词
Ferroelectricity; Negative Capacitance; Polarization Catastrophe;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The continued miniaturization of nanoelectronic devices approaches its fundamental physical limits due to power dissipation. Negative capacitance field-effect transistors using ferroelectric gate insulators are promising to overcome these limits, which would allow further device scaling. However, the microscopic details of negative capacitance are not well understood so far, since mainly Landau based mean-field theories are used to model these phenomena. Here we use an educational and simplified approach to better understand the basic microscopic origin of ferroelectric negative capacitance. Our "toy" model shows that negative capacitance originates from the thermodynamic instability of the ferroelectric polarization and is bounded by the saturation of microscopic dipole polarizability. This shows that negative capacitance is strongly connected to the origin of ferroelectricity itself. Furthermore, our microscopic model results in the same qualitative behavior as mean-field Landau based approaches.
引用
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页数:4
相关论文
共 18 条
[1]  
[Anonymous], 1963, The Feynman Lectures on Physics
[2]  
[Anonymous], 1976, INTRO SOLID STATE PH
[3]   Experimental Observation of Negative Capacitance in Ferroelectrics at Room Temperature [J].
Appleby, Daniel J. R. ;
Ponon, Nikhil K. ;
Kwa, Kelvin S. K. ;
Zou, Bin ;
Petrov, Peter K. ;
Wang, Tianle ;
Alford, Neil M. ;
O'Neill, Anthony .
NANO LETTERS, 2014, 14 (07) :3864-3868
[4]   Why Do Ferroelectrics Exhibit Negative Capacitance? [J].
Hoffmann, Michael ;
Ravindran, Prasanna Venkatesan ;
Khan, Asif Islam .
MATERIALS, 2019, 12 (22)
[5]   Unveiling the double-well energy landscape in a ferroelectric layer [J].
Hoffmann, Michael ;
Fengler, Franz P. G. ;
Herzig, Melanie ;
Mittmann, Terence ;
Max, Benjamin ;
Schroeder, Uwe ;
Negrea, Raluca ;
Pintilie, Lucian ;
Slesazeck, Stefan ;
Mikolajick, Thomas .
NATURE, 2019, 565 (7740) :464-+
[6]  
Janovec V., 1958, CZECH J PHYS, V8, P3, DOI [DOI 10.1007/BF01688741, 10.1007/BF01688741]
[7]  
Khan AI, 2018, INT EL DEVICES MEET
[8]   Experimental evidence of ferroelectric negative capacitance in nanoscale heterostructures [J].
Khan, Asif Islam ;
Bhowmik, Debanjan ;
Yu, Pu ;
Kim, Sung Joo ;
Pan, Xiaoqing ;
Ramesh, Ramamoorthy ;
Salahuddin, Sayeef .
APPLIED PHYSICS LETTERS, 2011, 99 (11)
[9]   Transient Negative Capacitance Effect in Atomic-Layer-Deposited Al2O3 /Hf0.3 Zr0.7O2 Bilayer Thin Film [J].
Kim, Keum Do ;
Kim, Yu Jin ;
Park, Min Hyuk ;
Park, Hyeon Woo ;
Kwon, Young Jae ;
Lee, Yong Bin ;
Kim, Han Joon ;
Moon, Taehwan ;
Lee, Young Hwan ;
Hyun, Seung Dam ;
Kim, Baek Su ;
Hwang, Cheol Seong .
ADVANCED FUNCTIONAL MATERIALS, 2019, 29 (17)
[10]   Time-Dependent Negative Capacitance Effects in Al2O3/BaTiO3 Bilayers [J].
Kim, Yu Jin ;
Yamada, Hiroyuki ;
Moon, Taehwan ;
Kwon, Young Jae ;
An, Cheol Hyun ;
Kim, Han Joon ;
Do Kim, Keum ;
Lee, Young Hwan ;
Hyun, Seung Dam ;
Park, Mm Hyuk ;
Hwang, Cheol Seong .
NANO LETTERS, 2016, 16 (07) :4375-4381