Quantitative dopant profiling in semiconductors: A Kelvin probe force microscopy model

被引：38

作者：

Baumgart, C. ^{[1
]}

Helm, M. ^{[1
]}

Schmidt, H. ^{[1
]}

机构：

[1] Forschungszentrum Dresden Rossendorf eV, Inst Ion Beam Phys & Mat Res, D-01314 Dresden, Germany

来源：

PHYSICAL REVIEW B | 2009年 / 80卷 / 08期

关键词：

elemental semiconductors; Fermi level; nanostructured materials; semiconductor doping; silicon; SCANNING CAPACITANCE MICROSCOPY; SPREADING RESISTANCE MICROSCOPY; SILICON PN JUNCTION; LABEL-FREE; RESOLUTION; DEVICES; TIP;

D O I：

10.1103/PhysRevB.80.085305

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Kelvin probe force microscopy (KPFM) is used to investigate the electrostatic force between a conductive probe and nanostructured Si with shallow or buried selectively doped regions under ambient conditions. A unique KPFM model correlates the measured Kelvin bias with the calculated Fermi energy, and thus allows quantitative dopant profiling. We show that due to an asymmetric electric-dipole formation at the semiconductor surface the measured Kelvin bias is related with the difference between Fermi energy and respective band edge, and independent of the probe potential.

引用

页数：5

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