Lift-off technology for SiCUV detectors

被引：9
|
作者：
Badila, M
Brezeanu, G [1 ]
Millan, J
Godignon, P
Locatelli, ML
Chante, JP
Lebedev, A
Lungu, P
Dinca, G
Banu, V
Banoiu, G
机构：
[1] Univ Politehn, Bucharest, Romania
[2] IMT Bucharest, Bucharest, Romania
[3] CNM Barcelona, Barcelona, Spain
[4] INSA Lyon, CEGELY, Lyon, France
[5] IOFFE, St Petersburg, Russia
[6] Dacia Synthet Diamond Co, Bucharest, Romania
[7] Baneasa SA, Bucharest, Romania
来源：
DIAMOND AND RELATED MATERIALS | 2000年 / 9卷 / 3-6期
关键词：
carbide (SiC); Schottky diode; technology; UV detectors;
D O I：
10.1016/S0925-9635(00)00189-8
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A silicon carbide Schottky UV detector technology is proposed. The Au Schottky contact is delimited using lift-off technology. The contact window was open into a sandwich of SiO2 oxides in order to produce a small angle ramp that constitutes the dielectric part of the Schottky diode termination. The I-V and C-V characteristics measured under dark and illuminated UV irradiation conditions indicate a significant sensitivity with UV radiation. (C) 2000 Elsevier Science S.A. All rights reserved.
引用
收藏
页码：994 / 997
页数：4
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