Lift-off technology for SiCUV detectors

被引：9

作者：

Badila, M

Brezeanu, G ^{[1
]}

Millan, J

Godignon, P

Locatelli, ML

Chante, JP

Lebedev, A

Lungu, P

Dinca, G

Banu, V

Banoiu, G

机构：

[1] Univ Politehn, Bucharest, Romania

[2] IMT Bucharest, Bucharest, Romania

[3] CNM Barcelona, Barcelona, Spain

[4] INSA Lyon, CEGELY, Lyon, France

[5] IOFFE, St Petersburg, Russia

[6] Dacia Synthet Diamond Co, Bucharest, Romania

[7] Baneasa SA, Bucharest, Romania

来源：

关键词：

carbide (SiC); Schottky diode; technology; UV detectors;

D O I：

10.1016/S0925-9635(00)00189-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A silicon carbide Schottky UV detector technology is proposed. The Au Schottky contact is delimited using lift-off technology. The contact window was open into a sandwich of SiO2 oxides in order to produce a small angle ramp that constitutes the dielectric part of the Schottky diode termination. The I-V and C-V characteristics measured under dark and illuminated UV irradiation conditions indicate a significant sensitivity with UV radiation. (C) 2000 Elsevier Science S.A. All rights reserved.

引用

页码：994 / 997

页数：4