Molecular beam epitaxy deposition of Gd2O3 thin films on SrTiO3 (100) substrate

被引：5

作者：

Wang, Jinxing ^{[1
]}

Hao, Jinghua ^{[1
]}

Zhang, Yangyang ^{[1
]}

Wei, Hongmei ^{[1
]}

Mu, Juyi ^{[1
]}

机构：

[1] Chongqing Univ, Coll Mat Sci & Engn, Chongqing 400044, Peoples R China

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2016年 / 80卷

基金：

中国国家自然科学基金;

关键词：

Molecular beam epitaxy; STO; Gd2O3 thin film; Interface; Orientation relation; GROWTH; OXIDES; LAALO3;

D O I：

10.1016/j.physe.2016.02.002

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Gd2O3 thin films are grown on the SrTiO3 (100) substrate by molecular beam epitaxy (MBE) deposition. X-ray diffraction (XRD) analysis, conventional transmission electron microscopy (TEM) and aberration corrected scanning transmission electron microscopy (STEM) are performed to investigate the microstructure of deposited thin films. It is found that the as-deposited thin film possesses a very uniform thickness of 40 nm and is composed of single cubic phase Gd2O3 grains. STEM and TEM observations reveal that Gd2O3 thin film grows epitaxially on the SrTiO3 (100) substrate with (001)Gd2O3//(100)STO and [110]Gd2O3//[001]STO orientations. Furthermore, the Gd atoms are found to diffuse into the SrTiO3 substrate for a depth of one unit cell and substitute for the Sr atoms near the interface. (C) 2016 Elsevier B.V. All rights reserved.

引用

页码：185 / 190

页数：6

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