Multiphoton ionization detection of SiF radicals in SiF4 plasmas

被引：8

作者：

Williams, KL

Bray, JA

Venturo, VA

Fisher, ER ^{[1
]}

机构：

[1] Colorado State Univ, Dept Chem, Ft Collins, CO 80523 USA

[2] Mattson Technol, Fremont, CA 94538 USA

来源：

CHEMICAL PHYSICS LETTERS | 2000年 / 323卷 / 1-2期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1016/S0009-2614(00)00518-2

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A newly constructed plasma molecular beam apparatus has been employed to study SiF radicals produced in a SiF, plasma. The SiF radicals are detected using [2 + 1] resonance enhanced multiphoton ionization (REMPI) combined with time of flight mass spectrometry (TOFMS). The absorption band from the (1, 0) C "(2)Sigma(+) <-- X(2)Pi(1/2) transition of the SiF molecule was monitored. Production of SiF in the plasma has been measured as a function of plasma parameters, including addition of H-2 and O-2, and applied rf power. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：137 / 144

页数：8

共 34 条

[1] Resonance enhanced multiphoton ionisation of the SiF radical: A reinvestigation [J].