Incoherent-light pulse annealing of nanoporous germanium layers formed by ion implantation

被引：3

作者：

Stepanov, A. L. ^{[1
]}

Farrakhov, B. F. ^{[1
]}

Fattakhov, Ya, V ^{[1
]}

Rogov, A. M. ^{[2
]}

Konovalov, D. A. ^{[1
]}

Nuzhdin, V., I ^{[1
]}

Valeev, V. F. ^{[1
]}

机构：

[1] FCR Kazan Sci Ctr RAS, Zavoisky Phys Tech Inst, Kazan 420029, Russia

[2] Kazan Fed Univ, Kazan 420008, Russia

来源：

VACUUM | 2021年 / 186卷 / 186期

关键词：

Ion implantation; Nanoporous germanium; Incoherent-light pulse annealing;

D O I：

10.1016/j.vacuum.2021.110060

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The study addresses the monocrystalline c-Ge substrates implanted by Ag+ ions with the energy of 30 keV, irradiation dose of 7.5.10(16) ion/cm(2) at current density of 8 mu A/cm(2) and annealed by incoherent-light pulse. By scanning electron microscopy and optical reflection spectroscopy measurements it was shown that after ion implantation an amorphous porous Ag:PGe layer of a spongy structure with nanowires on the c-Ge substrate were formed. Pulsed light annealing of the implanted samples leads to partial melting and recrystallization of the surface Ag:PGe layer. The spongy annealed structure of the Ag:PGe layer was not destroyed, however the diameters of nanowires increased by about 1,5 times.

引用

页数：5

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