Decoupled electron and phonon transports in hexagonal boron nitride-silicene bilayer heterostructure

被引:31
作者
Cai, Yongqing [1 ]
Pei, Qing-Xiang [1 ]
Zhang, Gang [1 ]
Zhang, Yong-Wei [1 ]
机构
[1] ASTAR, Inst High Performance Comp, Singapore 138632, Singapore
关键词
BAND-GAP; FIELD; TRANSISTORS; POTENTIALS; ENERGETICS; STABILITY; MAGNETISM; DEFECTS;
D O I
10.1063/1.4941534
中图分类号
O59 [应用物理学];
学科分类号
摘要
Calculations based on the density functional theory and empirical molecular dynamics are performed to investigate interlayer interaction, electronic structure and thermal transport of a bilayer heterostructure consisting of silicene and hexagonal boron nitride (h-BN). In this heterostructure, the two layers are found to interact weakly via a non-covalent binding. As a result, the Dirac cone of silicene is preserved with the Dirac cone point being located exactly at the Fermi level, and only a small amount of electrons are transferred from h-BN to silicene, suggesting that silicene dominates the electronic transport. Molecular dynamics calculation results demonstrate that the heat current along h-BN is six times of that along silicene, suggesting that h-BN dominates the thermal transport. This decoupled role of h-BN and silicene in thermal and electronic transport suggests that the BN-silicene bilayer heterostructure is promising for thermoelectric applications. (C) 2016 AIP Publishing LLC.
引用
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页数:6
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