Monolayer coverage and channel length set the mobility in self-assembled monolayer field-effect transistors

被引:123
作者
Mathijssen, Simon G. J. [1 ,2 ]
Smits, Edsger C. P. [1 ,3 ]
van Hal, Paul A. [1 ]
Wondergem, Harry J. [1 ]
Ponomarenko, Sergei A. [4 ]
Moser, Armin [5 ]
Resel, Roland [5 ]
Bobbert, Peter A. [2 ]
Kemerink, Martijn [2 ]
Janssen, Rene A. J. [2 ]
de Leeuw, Dago M. [1 ,6 ]
机构
[1] Philips Res Labs, NL-5656 AE Eindhoven, Netherlands
[2] Eindhoven Univ Technol, Dept Appl Phys, NL-5600 MB Eindhoven, Netherlands
[3] Holst Ctr TNO, NL-5656 AE Eindhoven, Netherlands
[4] Russian Acad Sci, Enikolopov Inst Synthet Polymer Mat, Moscow 117393, Russia
[5] Graz Univ Technol, Inst Solid State Phys, A-8010 Graz, Austria
[6] Univ Groningen, Zernike Inst Adv Mat, NL-9747 AG Groningen, Netherlands
关键词
THIN-FILM TRANSISTORS; PERCOLATION; MICROSCOPY; DEPENDENCE; RESISTANCE; CIRCUITS;
D O I
10.1038/nnano.2009.201
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The mobility of self-assembled monolayer field-effect transistors (SAMFETs) traditionally decreases dramatically with increasing channel length. Recently, however, SAMFETs using liquid-crystalline molecules have been shown to have bulk-like mobilities that are virtually independent of channel length. Here, we reconcile these scaling relations by showing that the mobility in liquid crystalline SAMFETs depends exponentially on the channel length only when the monalayer is incomplete. We explain this dependence both numerically and analytically, and show that charge transport is not affected by carrier injection, grain boundaries or conducting island size. At partial coverage, that is when the monolayer is incomplete, liquid-crystalline SAMFETs thus form a unique model system to study size-dependent conductance originating from charge percolation in two dimensions.
引用
收藏
页码:674 / 680
页数:7
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