Spectroscopic studies of random telegraph noise in InAs quantum dots in GaAs

被引:11
作者
Panev, N
Pistol, ME
Jeppesen, S
Evtikhiev, VP
Katznelson, AA
Kotelnikov, EY
机构
[1] Lund Univ, S-22100 Lund, Sweden
[2] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
关键词
D O I
10.1063/1.1518792
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have observed and investigated random telegraph noise in the photoluminescence from InAs quantum dots in GaAs. The luminescence from a single quantum dot, exhibiting switching between two levels, has been spectrally resolved. The random telegraph noise is only observed in the presence of band filling. We find no spectral shift of the emission in the different states. It is only the intensity, mainly for higher energy peaks, that changes. The InAs quantum dots behave similarly to InP/GaInP and InGaAs/GaAs quantum dots, with respect to random telegraph noise. (C) 2002 American Institute of Physics.
引用
收藏
页码:7086 / 7089
页数:4
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