Electrical Characteristics of Hybrid Nanoparticle-Nanowire Devices

被引：4

作者：

Jeong, Dong-Young ^{[1
]}

Keem, Kihyun

Park, Byoungjun

Cho, Kyoungah

Kim, Sangsig

机构：

[1] Korea Univ, Dept Elect Engn, Seoul 136701, South Korea

来源：

IEEE TRANSACTIONS ON NANOTECHNOLOGY | 2009年 / 8卷 / 05期

关键词：

FET logic devices; FET memory integrated circuits; memories; nanotechnology; FIELD-EFFECT TRANSISTOR; MEMORY;

D O I：

10.1109/TNANO.2009.2021995

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Gold nanoparticles synthesized by a colloidal method were deposited in an Al(2)O(3) dielectric layer of an omega-gated single ZnO nanowire FET. These gold nanoparticles were utilized as localized trap sites. The adsorption of the gold nanoparticles on an Al(2)O(3)-coated ZnO nanowire was confirmed by high-resolution transmission electron microscopy. In this study, a hybrid nanoparticle-nanowire device was fabricated by conventional Si processing. Its electrical characteristics indicated that electrons in the conduction band of the ZnO nanowire can be transported to the localized trap sites by gold nanoparticles for gate voltages greater than 1 V, through the 10-nm-thick Al(2)O(3) tunneling oxide layer.

引用

页码：650 / 653

页数：4

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