Scintillation characteristics on anthracene-doped naphthalene crystal for 137Cs-γ ray source

被引：18
作者：
Balamurugan, N.
Arulchakkaravarthi, A.
Ramasamy, P. [1 ]
机构：
[1] Anna Univ, Crystal Growth Ctr, Madras 600025, Tamil Nadu, India
[2] Univ S Carolina, Dept Elect Engn, Columbia, SC 29208 USA
[3] SSN Coll Engn, Kalavakkam 603110, India
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2006年 / 568卷 / 02期
关键词：
Bridgman technique; aromatic organic materials; scintillation detector; X-ray diffraction; ENERGY-TRANSFER; DECAY; FLUORESCENCE; STILBENE;
D O I：
10.1016/j.nima.2006.08.035
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
In this paper, we report scintillation characterizations on anthracene-doped naphthalene (NA) crystal. Crystals of this scintillator have been grown using the Bridgman-growth process. The peak of NA crystal emission is at 425 nm. The luminescence intensity of the NA crystal is 3 times that of pure naphthalene crystal. Naphthalene when doped with anthracene has high light output and fast principal decay constant (< 30 ns). For 662 keV gamma rays (Cs-137 source), energy resolution of 18% (FWHM) has been recorded at room temperature for NA crystals coupled to a photomultiplier. The pulse height of NA is 10 times greater than the pure naphthalene crystal. The NA detector exhibited a good timing performance compared to trans-stilbene detector. (c) 2006 Elsevier B.V. All rights reserved.
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收藏
页码：767 / 771
页数：5
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