Effect of a CoFeB layer on the anisotropic magnetoresistance of Ta/CoFeB/MgO/NiFe/MgO/CoFeB/Ta films

被引：5

作者：

Li, Minghua ^{[1
]}

Shi, Hui ^{[1
]}

Dong, Yuegang ^{[1
]}

Ding, Lei ^{[2
]}

Han, Gang ^{[1
]}

Zhang, Yao ^{[1
]}

Liu, Ye ^{[1
]}

Yu, Guanghua ^{[1
]}

机构：

[1] Univ Sci & Technol Beijing, Dept Mat Phys & Chem, Beijing 100083, Peoples R China

[2] Hainan Univ, Sch Mat & Chem Engn, Haikou 570228, Peoples R China

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2017年 / 439卷

基金：

美国国家科学基金会;

关键词：

Anisotropic magnetoresistance (AMR); NiFe; CoFeB; Annealing; X-ray diffraction (XRD); High-resolution transmission electron microscopy (HRTEM); NIFE THIN-FILMS; NIO;

D O I：

10.1016/j.jmmm.2017.04.079

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The anisotropic magnetoresistance (AMR) and magnetic properties of NiFe films can be remarkably enhanced via CoFeB layer. In the case of an ultrathin NiFe film having a Ta/CoFeB/MgO/NiFe/MgO/CoFe B/Ta structure, the CoFeB/MgO layers suppressed the formation of magnetic dead layers and the interdiffusions and interface reactions between the NiFe and Ta layers. The AMR reached a maximum value of 3.56% at 450 degrees C. More importantly, a single NiFe (111) peak can be formed resulting in higher AMR values for films having CoFeB layer. This enhanced AMR also originated from the significant specular reflection of electrons owing to the crystalline MgO layer, together with the sharp interfaces with the NiFe layer. These factors together resulted in higher AMR and improved magnetic properties. (C) 2017 Elsevier B.V. All rights reserved.

引用

页码：17 / 21

页数：5

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