Stable electrical performance observed in large-scale monolayer WSe2(1-x)S2x with tunable band gap

被引：34

作者：

Huang, Jian ^{[1
]}

Wang, Wenhui ^{[1
]}

Fu, Qi ^{[1
]}

Yang, Lei ^{[1
]}

Zhang, Kun ^{[2
]}

Zhang, Jingyu ^{[3
]}

Xiang, Bin ^{[1
]}

机构：

[1] Univ Sci & Technol China, Dept Mat Sci & Engn, CAS Key Lab Mat Energy Convers, Synerget Innovat Ctr Quantum Informat Quantum Phy, Hefei 230026, Anhui, Peoples R China

[2] Univ Sci & Technol China, Ctr Micro & Nanoscale Res & Fabricat, Hefei 230026, Anhui, Peoples R China

[3] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Mol Foundry, 1 Cyclotron Rd, Berkeley, CA 94720 USA

来源：

NANOTECHNOLOGY | 2016年 / 27卷 / 13期

基金：

中国国家自然科学基金;

关键词：

monolayer WSe2(1-x)S2x; field effect transistor; tunable band gap; LARGE-AREA SYNTHESIS; WSE2; TRANSITION; ELECTRONICS; TRANSPORT; GRAPHENE; DIODES; LAYERS; MONO;

D O I：

10.1088/0957-4484/27/13/13LT01

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Two-dimensional (2D) semiconductor materials have attracted broad interest due to their unique structures and physical properties. The stability of the 2D-material-based devices plays a key role in their practical applications. Here, we report the promising stable electrical performance in the large-scale monolayer WSe2(1-x)S2x with a tunable band gap. Photoluminescence (PL) spectroscopy was utilized to verify the tunable band gap in the as-grown monolayer with a tuning capability of 120 meV. Gated field effect transistor (FET) performance confirmed the p-type transport behavior in monolayer WSe2(1-x)S2x with a high on/off ratio (>10(4)). Top-gated FET configuration improves the carrier mobility with two orders larger than that in the back-gated FET device. After exposure to air for three months, the device performance manifested excellent stability with no source-drain current drop observed. P-type WSe2(1-x)S2x with a tunable band gap is the ideal complement to n-type tunable monolayers in the application of pn junction-related flexible nanodevices.

引用

页数：7

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