Advanced Color Filter Isolation Technology for Sub-Micron Pixel of CMOS Image Sensor

被引:3
作者
Bak, Hojin [1 ]
Lee, Horyeong [1 ]
Kim, Won-Jin [1 ]
Choi, Inho [1 ]
Kim, Hanjun [1 ]
Kim, Dongha [1 ]
Lee, Hanseung [1 ]
Han, Sukman [1 ]
Lee, Kyoung-In [1 ]
Do, Youngwoong [1 ]
Cho, Minsu [1 ]
Baek, Moung-Seok [1 ]
Kim, Kyungdo [1 ]
Park, Wonje [1 ]
Kang, Seong-Hun [1 ]
Hong, Sung-Joo [1 ]
Oh, Hoon-Sang [1 ]
Song, Changrock [1 ]
机构
[1] SK Hynix Inc, Icheon, Gyeonggi Do, South Korea
来源
2022 INTERNATIONAL ELECTRON DEVICES MEETING, IEDM | 2022年
关键词
D O I
10.1109/IEDM45625.2022.10019484
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this work, novel color filter isolation technology, which adopts air, the lowest refractive index material on the earth, as a major component of an optical grid structure for sub-micron pixels of a CMOS image sensor, is presented. Metal in a conventional metal grid structure, which has been widely used for mobile CMOS image sensors, was replaced by the air. The image quality improvement was verified through the enhanced optical performance of the air- grid-assisted pixels.
引用
收藏
页数:4
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