Mn enriched surface of annealed (GaMn)As layers annealed under arsenic capping

被引：11
作者：
Adell, M. [1 ]
Adell, J.
Ilver, L.
Kanski, J.
Sadowski, J.
Domagala, J. Z.
机构：
[1] Chalmers, Dept Appl Phys, SE-41296 Gothenburg, Sweden
[2] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland
来源：
PHYSICAL REVIEW B | 2007年 / 75卷 / 05期
关键词：
D O I：
10.1103/PhysRevB.75.054415
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Using synchrotron radiation based spectroscopic methods we have investigated the surface modifications of Ga1-xMnxAs layers due to post growth annealing under amorphous arsenic capping layers. It is established that there is a clear increase of the Mn concentration at the surface after annealing. This is ascribed to a reaction between diffusing Mn interstitials and the As capping. The reacted surface is smooth and well ordered with a 1x2 reconstruction. All data indicate that the annealed (GaMn)As is terminated by a monolayer MnAs in zinc-blende structure.
引用
收藏
页数：6
相关论文
共 23 条
  • [1] Postgrowth annealing of (Ga,Mn) As under As capping:: An alternative way to increase TC -: art. no. 112501
    Adell, M
    Ilver, L
    Kanski, J
    Stanciu, V
    Svedlindh, P
    Sadowski, J
    Domagala, JZ
    Terki, F
    Hernandez, C
    Charar, S
    [J]. APPLIED PHYSICS LETTERS, 2005, 86 (11) : 1 - 3
  • [2] Photoemission studies of the annealing-induced modifications of Ga0.95Mn0.05As -: art. no. 125204
    Adell, M
    Ilver, L
    Kanski, J
    Sadowski, J
    Mathieu, R
    Stanciu, V
    [J]. PHYSICAL REVIEW B, 2004, 70 (12) : 125204 - 1
  • [3] Photoemission studies of Ga1-xMnxAs:: Mn concentration dependent properties -: art. no. 115319
    Åsklund, H
    Ilver, L
    Kanski, J
    Sadowski, J
    Mathieu, R
    [J]. PHYSICAL REVIEW B, 2002, 66 (11) : 1153191 - 1153195
  • [4] The growth of GaMnAs films by molecular beam epitaxy using arsenic dimers
    Campion, RP
    Edmonds, KW
    Zhao, LX
    Wang, KY
    Foxon, CT
    Gallagher, BL
    Staddon, CR
    [J]. JOURNAL OF CRYSTAL GROWTH, 2003, 251 (1-4) : 311 - 316
  • [5] Effect of low-temperature annealing on (Ga,Mn)As trilayer structures
    Chiba, D
    Takamura, K
    Matsukura, F
    Ohno, H
    [J]. APPLIED PHYSICS LETTERS, 2003, 82 (18) : 3020 - 3022
  • [6] Mn interstitial diffusion in (Ga,Mn)As
    Edmonds, KW
    Boguslawski, P
    Wang, KY
    Campion, RP
    Novikov, SN
    Farley, NRS
    Gallagher, BL
    Foxon, CT
    Sawicki, M
    Dietl, T
    Nardelli, MB
    Bernholc, J
    [J]. PHYSICAL REVIEW LETTERS, 2004, 92 (03) : 4
  • [7] Carrier induced ferromagnetic interactions and transport properties of p-Zn(1-x)MnxTe epilayers
    Ferrand, D
    Cibert, J
    Wasiela, A
    Bourgognon, C
    Tatarenko, S
    Fishman, G
    Kolesnik, S
    Jaroszynski, J
    Dietl, T
    Barbara, B
    Dufeu, D
    [J]. JOURNAL OF APPLIED PHYSICS, 2000, 87 (09) : 6451 - 6453
  • [8] Independent electronic and magnetic doping in (Ga,Mn)As based digital ferromagnetic heterostructures
    Johnston-Halperin, E
    Schuller, JA
    Gallinat, CS
    Kreutz, TC
    Myers, RC
    Kawakami, RK
    Knotz, H
    Gossard, AC
    Awschalom, DD
    [J]. PHYSICAL REVIEW B, 2003, 68 (16):
  • [9] Annealing-dependent magnetic depth profile in Ga1-xMnxAs -: art. no. 081307
    Kirby, BJ
    Borchers, JA
    Rhyne, JJ
    Velthuis, SGET
    Hoffmann, A
    O'Donovan, KV
    Wojtowicz, T
    Liu, X
    Lim, WL
    Furdyna, JK
    [J]. PHYSICAL REVIEW B, 2004, 69 (08)
  • [10] Highly enhanced Curie temperature in low-temperature annealed [Ga,Mn]As epilayers
    Ku, KC
    Potashnik, SJ
    Wang, RF
    Chun, SH
    Schiffer, P
    Samarth, N
    Seong, MJ
    Mascarenhas, A
    Johnston-Halperin, E
    Myers, RC
    Gossard, AC
    Awschalom, DD
    [J]. APPLIED PHYSICS LETTERS, 2003, 82 (14) : 2302 - 2304
123