Precision cutting and patterning of graphene with helium ions

被引：324

作者：

Bell, D. C. ^{[1
,2
]}

Lemme, M. C. ^{[3
]}

Stern, L. A. ^{[4
]}

RWilliams, J. ^{[1
,3
]}

Marcus, C. M. ^{[3
]}

机构：

[1] Harvard Univ, Sch Engn & Appl Sci, Cambridge, MA 02138 USA

[2] Harvard Univ, Ctr Nanoscale Syst, Cambridge, MA 02138 USA

[3] Harvard Univ, Dept Phys, Cambridge, MA 02138 USA

[4] Carl Zeiss SMT Inc, Peabody, MA 01960 USA

来源：

NANOTECHNOLOGY | 2009年 / 20卷 / 45期

关键词：

D O I：

10.1088/0957-4484/20/45/455301

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We report nanoscale patterning of graphene using a helium ion microscope configured for lithography. Helium ion lithography is a direct-write lithography process, comparable to conventional focused ion beam patterning, with no resist or other material contacting the sample surface. In the present application, graphene samples on Si/SiO(2) substrates are cut using helium ions, with computer controlled alignment, patterning, and exposure. Once suitable beam doses are determined, sharp edge profiles and clean etching are obtained, with little evident damage or doping to the sample. This technique provides fast lithography compatible with graphene, with similar to 15 nm feature sizes.

引用

页数：5