Fractal-like model of porous silicon

被引:18
作者
Wesolowski, M [1 ]
机构
[1] Inst Elect Mat Technol, PL-01919 Warsaw, Poland
来源
PHYSICAL REVIEW B | 2002年 / 66卷 / 20期
关键词
D O I
10.1103/PhysRevB.66.205207
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A geometrical model of a porous silicon structure is proposed. The resulting size distribution spectra are analyzed by their relation to photoluminescence and Raman scattering. Both experimental data are investigated and compared to those results. The model well describes the presence of a low-energy part of the photoluminescence spectra with wavelength compatible to bulk crystalline silicon. Shapes and positions of Raman and photoluminescence lines are within the frames of model flexibility and indicate similar values of parameters, especially the minimal size of crystallites where Raman scattering and radiative recombination reveal the activity.
引用
收藏
页码:1 / 5
页数:5
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