MBE growth of AlGaN/GaN HEMTs with high power density

被引：26

作者：

Katzer, DS ^{[1
]}

Binari, SC ^{[1
]}

Storm, DF ^{[1
]}

Roussos, JA ^{[1
]}

Shanabrook, BV ^{[1
]}

Glaser, ER ^{[1
]}

机构：

[1] USN, Res Lab, Div Elect Sci & Technol, Washington, DC 20375 USA

来源：

ELECTRONICS LETTERS | 2002年 / 38卷 / 25期

关键词：

D O I：

10.1049/el:20021102

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

RF-plasma MBE has been used for the growth of undoped Al0.25Ga0.75N/GaN HEMT structures on semi-insulating SiC substrates. Devices with a 1.5 mum gate length have an f(T) of 10 GHz and have demonstrated an output power density of 6.3 W/mm at 2 GHz. Details of the growth process and device results are presented.

引用

页码：1740 / 1741

页数：2