H2O Induced Hump Phenomenon in Capacitance-Voltage Measurements of a-IGZO Thin-Film Transistors

被引：17

作者：

Han, Yanbing ^{[1
]}

Cui, Can ^{[1
]}

Yang, Jianwen ^{[1
]}

Tsai, Ming-Yen ^{[2
]}

Chang, Ting-Chang ^{[2
]}

Zhang, Qun ^{[1
]}

机构：

[1] Fudan Univ, Dept Mat Sci, Natl Engn Lab TFT LCD Mat & Technol, Shanghai 200433, Peoples R China

[2] Natl Sun Yat Sen Univ, Dept Photon, Kaohsiung 80424, Taiwan

来源：

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY | 2016年 / 16卷 / 01期

基金：

中国国家自然科学基金;

关键词：

Capacitance-Voltage (C-V) measurements; bias stability; amorphous InGaZnO (a-IGZO); thin-film transistor (TFT);

D O I：

10.1109/TDMR.2015.2502989

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Through employing capacitance-voltage (C-V) measurements, the stability of a-IGZO TFTs after applying negative bias stress in different ambient atmospheres was investigated. The hump phenomenon in C-V curve, different from that in the vacuum, was observed after applying negative bias stress in the air, which was concerned with H2O. In addition, results in the oxygen atmosphere slightly changed under negative bias stress. Compared with traditional I-V curves, C-V measurements helped to better understand the degradation of a-IGZO TFTs. A two-conductive-way model was built to explain the mechanism of instability.

引用

页码：20 / 24

页数：5

共 15 条

[1] Effect of channel widths on negative shift of threshold voltage, including stress-induced hump phenomenon in InGaZnO thin-film transistors under high-gate and drain bias stress [J].

Choi, Sung-Hwan ;

Han, Min-Koo .

APPLIED PHYSICS LETTERS, 2012, 100 (04)

[2] Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances [J].

Fortunato, E. ;

Barquinha, P. ;

Martins, R. .

ADVANCED MATERIALS, 2012, 24 (22) :2945-2986

[3] Development of IGZO TFTs and Their Applications to Next-Generation Flat-Panel Displays [J].

Hsieh, Hsing-Hung ;

Lu, Hsiung-Hsing ;

Ting, Hung-Che ;

Chuang, Ching-Sang ;

Chen, Chia-Yu ;

Lin, Yusin .

JOURNAL OF INFORMATION DISPLAY, 2010, 11 (04) :160-164

[4] Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors [J].

Jeong, Jae Kyeong ;

Yang, Hui Won ;

Jeong, Jong Han ;

Mo, Yeon-Gon ;

Kim, Hye Dong .

APPLIED PHYSICS LETTERS, 2008, 93 (12)

[5] Operational and environmental stability of pentacene thin-film transistors [J].

Kagan, CR ;

Afzali, A ;

Graham, TO .

APPLIED PHYSICS LETTERS, 2005, 86 (19) :1-3

[6] Present status of amorphous In-Ga-Zn-O thin-film transistors [J].

Kamiya, Toshio ;

Nomura, Kenji ;

Hosono, Hideo .

SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS, 2010, 11 (04)

[7] Amorphous gallium indium zinc oxide thin film transistors: Sensitive to oxygen molecules [J].

Kang, Donghun ;

Lim, Hyuck ;

Kim, Changjung ;

Song, Ihun ;

Park, Jaechoel ;

Park, Youngsoo ;

Chung, JaeGwan .

APPLIED PHYSICS LETTERS, 2007, 90 (19)

[8] The Influence of Moisture Barrier Films in ZnO-Based Thin Film Transistors [J].

Kim, Woong-Sun ;

Shin, Sae-Young ;

Park, Jong-Wan .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2012, 159 (04) :H353-H357

[9] Bias-stress-induced stretched-exponential time dependence of threshold voltage shift in InGaZnO thin film transistors [J].

Lee, Jeong-Min ;

Cho, In-Tak ;

Lee, Jong-Ho ;

Kwon, Hyuck-In .

APPLIED PHYSICS LETTERS, 2008, 93 (09)

[10] BIAS-STRESS-INDUCED STRETCHED-EXPONENTIAL TIME-DEPENDENCE OF CHARGE INJECTION AND TRAPPING IN AMORPHOUS THIN-FILM TRANSISTORS [J].

LIBSCH, FR ;

KANICKI, J .

APPLIED PHYSICS LETTERS, 1993, 62 (11) :1286-1288

← 1 2 →