Electron and photon effects in imaging devices utilizing quantum dot infrared photodetectors and light emitting diodes

被引：3
作者：
Ryzhii, V [1 ]
Khmyrova, I [1 ]
机构：
[1] Univ Aizu, Aizu Wakamatsu 9658580, Japan
来源：
PHOTODETECTORS: MATERIALS AND DEVICES V | 2000年 / 3948卷
关键词：
quantum dot infrared photodetector; light emitting diode; electron and photon effects; dark current; photocurrent; responsivity; contrast transfer characteristic;
D O I：
10.1117/12.382121
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
This paper presents the recent developments of device models for quantum dot infrared photodetectors (QDIPs) and for imagers based on the integration of these photodetectors with light emitting diodes (LEDs). We derive analytical formulas for the dark current and the responsivity in QDIPs based on different QD structures and the QDIP-LED contrast transfer characteristic as functions of the structural parameters and the bias voltage. It is shown that the characteristics of QDIPs are strongly affected by the effect of electron accumulation in QDs close to the emitter contact. The main effect limiting QDIP-LED imager resolution is associated with the processes of photon reabsorption and reemission in the device LED part.
引用
收藏
页码：206 / 219
页数：14
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