Low-voltage ZnO thin-film transistors operating at 2.0V gated with mesoporous SiO2 dielectric processed at room-temperature

被引：5

作者：

Hu, Y. ^{[1
,2
]}

Lu, A. X. ^{[1
]}

Wang, L. P. ^{[1
]}

Yu, H. C. ^{[1
]}

Wan, Q. ^{[1
,2
]}

机构：

[1] Hunan Univ, Minist Educ, Key Lab Micronano Optoelect Devices, Changsha 410082, Hunan, Peoples R China

[2] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2009年 / 42卷 / 02期

基金：

中国国家自然科学基金;

关键词：

Low-voltage thin-film transistors; ZnO nanocrystal; Mesoporous Sio(2) dielectric; Electric double layer; MOBILITY; DEVICES;

D O I：

10.1016/j.physe.2009.09.019

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Low-voltage thin-film transistors (TFTs) with ZnO nanocrystal channel layers and mesoporous SiO2 gate dielectric are fabricated on glass substrates at room-temperature. The resulting n-type TFTs operate at a low voltage of 2.0 V. The equivalent field-effect electron mobility, current on/off ratio and subthreshold voltage swing is estimated to be 28.8 cm(2) V-1 s(-1), 3 x 10(6) and 84 mV/decade, respectively. The possible mechanism for low-voltage operation is discussed based on the electric double layer effect. Such room-temperature-processed low-voltage TFTs are very promising for low-power macroelectronics on temperature-sensitive substrates. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：154 / 157

页数：4

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