AlGaN layers grown on GaN using strain-relief interlayers

被引：49

作者：

Chen, CQ ^{[1
]}

Zhang, JP ^{[1
]}

Gaevski, ME ^{[1
]}

Wang, HM ^{[1
]}

Sun, WH ^{[1
]}

Fareed, RSQ ^{[1
]}

Yang, JW ^{[1
]}

Khan, MA ^{[1
]}

机构：

[1] Univ S Carolina, Dept Elect Engn, Columbia, SC 29208 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 26期

关键词：

D O I：

10.1063/1.1531219

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on a study to compare the growth of thick AlGaN layers on GaN with different strain-relief interlayers. A set of ten period AlN/AlGaN superlattices was found to be the most efficient approach for the strain relief. The superlattice interlayer not only decreases the tensile strain but also improves the crystal structural quality. Thus, 2-mum-thick, high quality n(+)-Al0.2Ga0.8N layers can be grown on GaN epilayers without any cracks. (C) 2002 American Institute of Physics.

引用

页码：4961 / 4963

页数：3

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