Influence of carbon nanotubes and silicon carbide whiskers on the mechanical loss due to grain boundary sliding in 3-mol% yttria-stabilized tetragonal zirconia polycrystals

被引:5
作者
Ionascu, C. [1 ]
Schaller, R. [1 ]
机构
[1] Ecole Polytech Fed Lausanne, Inst Phys Mat Complexe, CH-1015 Lausanne, Switzerland
来源
MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING | 2006年 / 442卷 / 1-2期
关键词
zirconia; carbon nanotubes; silicon carbide; grain boundary; mechanical loss; high temperature;
D O I
10.1016/j.msea.2006.03.119
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
High-temperature mechanical spectroscopy was performed in pure 3Y-TZP, i.e. 3-mol% yttria-stabilized polycrystalline tetragonal zirconia, in 3Y-TZP doped with multiwalled carbon nanotubes and in 3Y-TZP doped with silicon carbide whiskers. Silicon carbide doping results in an increase in the high-temperature mechanical loss with respect to pure 3Y-TZP, with appearance of a relaxation peak. On the contrary, doping with carbon nanotubes leads to a decrease in the mechanical loss with respect to pure in 3Y-TZP. As high-temperature mechanical loss in 3Y-TZP has been interpreted as due grain boundary sliding, it appears that doping with nano-sized objects may affect the sliding process. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码:175 / 178
页数:4
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