Combinatorial fabrication and magnetic properties of homoepitaxial Co and Li co-doped NiO thin-film nanostructures

被引:12
作者
Joshi, U. S. [1 ]
Itaka, K. [2 ]
Matsumoto, Y. [3 ]
Koinuma, H. [2 ,4 ]
机构
[1] Gujarat Univ, Sch Sci, Dept Phys, Ahmadabad 380009, Gujarat, India
[2] Univ Tokyo, Inst Solid State Phys, Chiba 2778581, Japan
[3] Tokyo Inst Technol, Mat & Struct Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan
[4] Japan Sci & Technol Corp, CREST, Kawaguchi, Saitama 3320012, Japan
关键词
Combinatorial PLD; MOKE; Dilute magnetic semiconductor; ROOM-TEMPERATURE FERROMAGNETISM; ZNO; SEMICONDUCTORS; SPINTRONICS; INSULATORS;
D O I
10.1016/j.jmmm.2009.06.081
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Magnetic properties of nanostructured epitaxial thin layers of a series of Co and Li co-doped NiO on MgO(100) substrate with NiO buffer layer have been investigated. Thin films were synthesized by combinatorial laser molecular beam epitaxy (CLMBE) in the continuous binary composition spread approach. Large and linear variation of x was achieved in the growth of Co(x)Li(0.2)Ni(0.8-x)O, onto 9 mm of single substrate. Homoepitaxial growth with smooth surface morphology was confirmed by grazing incidence X-ray diffraction (GIXRD) and atomic force microscopy (AFM). Linear decrease in the band gap and optical transparency was observed with increasing cobalt concentration. The magneto-optical Kerr effect revealed a strong photon energy dependency with negative Kerr rotation for all the Co-concentrations in the film, suggesting intra-valence charge transfer (IVCT) between low spin state Co(2+) with host Ni(2+). Ferromagnetic (FM)-like ordering was observed at low temperatures, while antiferromagnetism predominates at room temperature in the Co and Li co-doped nickel oxide epitaxial films. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码:3595 / 3599
页数:5
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