High-performance InAIN/GaN HEMTs on silicon substrate with high fT x Lg

被引：43
作者：
Cui, Peng [1 ]
Mercante, Andrew [1 ]
Lin, Guangyang [1 ]
Zhang, Jie [1 ]
Yao, Peng [1 ]
Prather, Dennis W. [1 ]
Zeng, Yuping [1 ]
机构：
[1] Univ Delaware, Dept Elect & Comp Engn, Newark, DE 19716 USA
来源：
APPLIED PHYSICS EXPRESS | 2019年 / 12卷 / 10期
关键词：
ELECTRON-MOBILITY TRANSISTORS; ALGAN/GAN HEMTS; INALN/GAN HEMTS; POWER PERFORMANCE; F(T)/F(MAX); SI; MICROWAVE; GHZ; TECHNOLOGY; OPERATION;
D O I：
10.7567/1882-0786/ab3e29
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report an 80 nm gate-length In0.17Al0.83N/GaN high-electron mobility transistor (HEMT) on silicon substrate with a record low gate leakage current of 7.12 x 10(-7) A mm(-1), a record high on/off current ratio of 1.58 x 10(-6), and a steep subthreshold swing of 65 mV dec(-1), which are excellent features among the reported InAIN/GaN HEMTs on Si. Due to the excellent DC performance, a current gain cutoff frequency f(T) of 200 GHz is achieved, resulting in f(T) x L-g = 16 GHz mu m for GaN HEMTs on Si which to the best of our knowledge is a new record. (C) 2019 The Japan Society of Applied Physics
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页数：4
相关论文
共 58 条
[1]   Power Performance at 40 GHz of AlGaN/GaN High-Electron Mobility Transistors Grown by Molecular Beam Epitaxy on Si(111) Substrate [J].
Altuntas, Philippe ;
Lecourt, Francois ;
Cutivet, Adrien ;
Defrance, Nicolas ;
Okada, Etienne ;
Lesecq, Marie ;
Rennesson, Stephanie ;
Agboton, Alain ;
Cordier, Yvon ;
Hoel, Virginie ;
De Jaeger, Jean-Claude .
IEEE ELECTRON DEVICE LETTERS, 2015, 36 (04) :303-305
[2]  
Arulkumaran S, 2015, 2015 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK)
[3]   High-Frequency Microwave Noise Characteristics of InAlN/GaN High-Electron Mobility Transistors on Si (111) Substrate [J].
Arulkumaran, S. ;
Ranjan, K. ;
Ng, G. I. ;
Kumar, C. M. Manoj ;
Vicknesh, S. ;
Dolmanan, S. B. ;
Tripathy, S. .
IEEE ELECTRON DEVICE LETTERS, 2014, 35 (10) :992-994
[4]   435mS/mm transconductance for AlGaN/GaN HEMTs on HR-Si substrate with optimised gate-source spacing [J].
Bouzid, S. ;
Maher, H. ;
Defrance, N. ;
Hoel, V. ;
Lecourt, F. ;
Renvoise, M. ;
De Jaeger, J. C. ;
Frijlink, P. .
ELECTRONICS LETTERS, 2012, 48 (02) :69-70
[5]   AlGaN/GaN HEMTs on Silicon Substrate With 206-GHz FMAX [J].
Bouzid-Driad, S. ;
Maher, H. ;
Defrance, N. ;
Hoel, V. ;
De Jaeger, J. -C. ;
Renvoise, M. ;
Frijlink, P. .
IEEE ELECTRON DEVICE LETTERS, 2013, 34 (01) :36-38
[6]   Strained AlInN/GaN HEMTs on SiC With 2.1-A/mm Output Current and 104-GHz Cutoff Frequency [J].
Chabak, Kelson D. ;
Trejo, Manuel ;
Crespo, Antonio ;
Walker, Dennis E., Jr. ;
Yang, Jinwei ;
Gaska, Remis ;
Kossler, Mauricio ;
Gillespie, James K. ;
Jessen, Gregg H. ;
Trimble, Virginia ;
Via, Glen D. .
IEEE ELECTRON DEVICE LETTERS, 2010, 31 (06) :561-563
[7]   Effect of Gate Leakage in the Subthreshold Characteristics of AlGaN/GaN HEMTs [J].
Chung, Jinwook W. ;
Roberts, John C. ;
Piner, Edwin L. ;
Palacios, Tomas .
IEEE ELECTRON DEVICE LETTERS, 2008, 29 (11) :1196-1198
[8]  
Chung JW, 2010, INT EL DEVICES MEET, DOI 10.1109/IEDM.2010.5703449
[9]   Gate-Recessed InAlN/GaN HEMTs on SiC Substrate With Al2O3 Passivation [J].
Chung, Jinwook W. ;
Saadat, Omair I. ;
Tirado, Jose M. ;
Gao, Xiang ;
Guo, Shiping ;
Palacios, Tomas .
IEEE ELECTRON DEVICE LETTERS, 2009, 30 (09) :904-906
[10]   High-Power Ka-Band Performance of AlInN/GaN HEMT With 9.8-nm-Thin Barrier [J].
Crespo, A. ;
Bellot, M. M. ;
Chabak, K. D. ;
Gillespie, J. K. ;
Jessen, G. H. ;
Miller, V. ;
Trejo, M. ;
Via, G. D. ;
Walker, D. E., Jr. ;
Winningham, B. W. ;
Smith, H. E. ;
Cooper, T. A. ;
Gao, X. ;
Guo, S. .
IEEE ELECTRON DEVICE LETTERS, 2010, 31 (01) :2-4
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