Ion implantation fabricated integrated GaAs quantum well multi-wavelength light emitting chip

An integrated AlGaAs/GaAs single quantum well multi-wavelength light emitting chip fabricated by ion implantation and combined technology was reported. By interface intermixing more than 20 GaAs quantum well light emitting elements whose photoluminescence wavelength ranges from 787 to about 724nm were obtained. The effect of different doses of As+ and H+ and their combination on the shift of the photoluminescence wavelength of the quantum well was studied. With ion implantation and combined method the fabrication processes were drastically simplified. Such a. kind of multi-wavelength light emitting chip has great potentiality both on the application of wavelength division multiplexing (WDM), in which many lasers with different wavelengths are required and on the setting up of a database for optimizing the ion implantation processes.