Prototype of phase-change channel transistor for both nonvolatile memory and current control

We prototyped phase-change (PC) channel transistors and demonstrated two functions of nonvolatile memory and channel current control. We have developed prototype transistors that use a PC channel instead of a silicon channel. The PC material of a Ge2Sb2Te5 thin film with a thickness of 50 nm was used. We demonstrated a memory function whereby we achieved a reversible change between the crystalline and amorphous phases by applying a source-drain (SD) voltage for Joule heating. In the experiment, the applied voltages for PC between amorphous and crystalline phases were from 5 to 8 V. Control of the channel current was realized by applying a gate bias. The SD current was suppressed to less than 1/20 of that at a gate bias of -3 V by applying a gate bias of 0-3 V.