60GHz high output power uni-travelling-carrier photodiodes with integrated bias circuit

被引：24

作者：

Ito, H ^{[1
]}

Ohno, T ^{[1
]}

Fishimi, H ^{[1
]}

Furuta, T ^{[1
]}

Kodama, S ^{[1
]}

Ishibashi, T ^{[1
]}

机构：

[1] NTT, Photon Labs, Atsugi, Kanagawa 2430198, Japan

来源：

ELECTRONICS LETTERS | 2000年 / 36卷 / 08期

关键词：

Electric potential - Millimeter wave devices - Monolithic microwave integrated circuits - Optical waveguides;

D O I：

10.1049/el:20000564

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A millimetre-wave high-output-power uni-travelling-carrier photodiode with a monolithically integrated bias circuit utilising a 1/4-wavelength coplanar waveguide is presented. The device exhibits a high saturated output power of +10dBm with a bias voltage of -3V, and -6dBm without a bias voltage, both at 59.4GHz.

引用

页码：747 / 748

页数：2

共 7 条

[1]

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[4]

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[5]

Ohno T., 1999, International Topical Meeting on Microwave Photonics. MWP'99. Technical Digest (Cat. No.99EX301), P253, DOI 10.1109/MWP.1999.819697

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[7]

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