Terahertz emission mechanism of magnesium doped indium nitride

被引：16

作者：

Ahn, H. ^{[1
,2
]}

Yeh, Y. -J. ^{[1
,2
]}

Hong, Y. -L. ^{[3
]}

Gwo, S. ^{[3
]}

机构：

[1] Natl Chiao Tung Univ, Dept Photon, Hsinchu 30010, Taiwan

[2] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 30010, Taiwan

[3] Natl Tsing Hua Univ, Dept Phys, Hsinchu 30013, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 23期

关键词：

ACCUMULATION; SURFACES; INN;

D O I：

10.1063/1.3270042

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report carrier concentration-dependence of terahertz emission from magnesium doped indium nitride (InN:Mg) films. Near the critical concentration (n(c) similar to 1 x 10(18) cm(-3)), the competition between two emission mechanisms determines the polarity of terahertz emission. InN: Mg with n > n(c) exhibits enhanced positive polarity terahertz emission compared to the undoped InN, which is due to the reduced screening of the photo-Dember field. For InN: Mg with n < n(c), the polarity of terahertz signal changes to negative, indicating the dominant contribution of the surface electric field due to the large downward surface band bending within the surface layer extending over the optical absorption depth. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3270042]

引用

页数：3

共 17 条

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