Low threshold 650 nm band real refractive index-guided AlGaInP laser diodes with strain-compensated MQW active layer

被引：14

作者：

Honda, S

Miyake, T

Ikegami, T

Yagi, K

Bessho, Y

Hiroyama, R

Shono, M

Sawada, R

机构：

[1] Tottori Sanyo Elect Co Ltd, LED Div, Tottori 6808634, Japan

[2] Sanyo Elect Co Ltd, Microelect Res Ctr, Hirakata, Osaka 5738534, Japan

来源：

ELECTRONICS LETTERS | 2000年 / 36卷 / 15期

关键词：

D O I：

10.1049/el:20000907

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

650nm band real refractive index-guided AIGaInP laser diodes with a strain-compensated MQW active layer have been successfully fabricated. A threshold current of 9mA, which is the lowest ever reported. was achieved and 5mW operation was obtained up to 120 degrees C. These lasers have been operated for > 3000h under 5mW at 90 degrees C.

引用

页码：1284 / 1286

页数：3

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