Evaluation of 4H-SiC Thermal Oxide Reliability Using Area-Scaling Method

被引：16

作者：

Senzaki, Junji ^{[1
]}

Shimozato, Atsushi ^{[1
]}

Okamoto, Mitsuo ^{[1
]}

Kojima, Kazutoshi ^{[1
]}

Fukuda, Kenji ^{[1
]}

Okumura, Hajime ^{[1
]}

Arai, Kazuo ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Energy Semicond Elect Res Lab, Tsukuba, Ibaraki 3058568, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2009年 / 48卷 / 08期

关键词：

CZOCHRALSKI-GROWN SILICON; STACKING-FAULTS; DISLOCATIONS; DIODES; SUBSTRATE; WAFER;

D O I：

10.1143/JJAP.48.081404

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The reliability of thermal oxides grown on an n-type 4H-SiC(0001) was investigated using an area-scaling method, and the influence of dislocation defects on the time-dependent dielectric breakdown characteristics of thermal oxides was examined. A thermal oxide was grown by dry oxidation at 1200 degrees C followed by nitrogen post-oxidation annealing. Using the area-scaling method, the time-to-breakdown (t(BD)) distribution curves of metal-oxide-semiconductor (MOS) capacitors with different gate area sizes were converged to a single one. It was clearly shown that origins of dielectric breakdown are edge breakdown and dislocation-related breakdown for steep and gradual slopes of the area-scaling normalized t(BD) distribution curve, respectively. In addition, a yield analysis of MOS capacitors quantitatively indicated that both threading screw dislocation and basal plane dislocation are predominant killer defects for the dielectric breakdown of thermal oxides on the 4H-SiC(0001) face. (C) 2009 The Japan Society of Applied Physics

引用

页码：0814041 / 0814044

页数：4

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