Oxidation of Si1-x-yGexCy strained layers grown on Si:: kinetics and inter-face properties

被引：10

作者：

Cuadras, A

Garrido, B

Bonafos, C

Morante, JR

Fonseca, L

Pressel, K

机构：

[1] Univ Barcelona, Dept Elect, EME, E-08028 Barcelona, Spain

[2] CSIC, Inst Microelect Barcelona, CNM, Bellaterra 08193, Spain

[3] Inst Semicond Phys, D-15230 Frankfurt, Germany

来源：

MICROELECTRONICS RELIABILITY | 2000年 / 40卷 / 4-5期

关键词：

D O I：

10.1016/S0026-2714(99)00317-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have investigated the thermal oxidation of strained Si1-xGex and Si1-x-yGexCy layers and the influence of the thermal process on the structure of the layers. Using XPS and SIMS depth profiles, we have found a germanium pile-up in the epitaxial layer near the oxide-layer interface. Using transmission electron microscopy (TEM), we have observed that crystallinity is well conserved, but additionally, we have found SiC precipitates. A qualitative model for the oxidation of this kind of binary and ternary alloys is presented. The model is based on the strain development of the samples and depends on germanium and carbon compositions and on the temperature of the process. (C) 2000 Elsevier Science Ltd. All rights reserved.

引用

页码：829 / 832

页数：4

共 10 条

[1]

CUADRAS A, 1999, E MRS S P JUN

[2]

GARRIDO B, 1999, INFOS

[3]

ISMAIL K, 1994, APPL PHYS LETT, V64, P3125

[4] 1.8 million transistor CMOS ASIC fabricated in a SiGe BiCMOS technology [J].

Johnson, RA ;

Zierak, MJ ;

Outama, KB ;

Bahn, TC ;

Joseph, AJ ;

Cordero, CN ;

Malinowski, J ;

Bard, KA ;

Weeks, TW ;

Milliken, RA ;

Medve, TJ ;

May, GA ;

Chong, W ;

Walter, KM ;

Tempest, SL ;

Chau, BB ;

Boenke, M ;

Nelson, MW ;

Harame, DL .

INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST, 1998, :217-220

[5] Si/SiGe:C heterojunction bipolar transistors in an epi-free well, single-polysilicon technology [J].

Knoll, D ;

Heinemann, B ;

Osten, HJ ;

Ehwald, KE ;

Tillack, B ;

Schley, P ;

Barth, R ;

Matthes, M ;

Park, KS ;

Kim, Y ;

Winkler, W .

INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST, 1998, :703-706

[6]

KOCK G, 1998, THIN SOLID FILMS, V336, P141

[7] Supersaturated carbon in silicon and silicon/germanium alloys [J].

Osten, HJ .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1996, 36 (1-3) :268-274

[8] Impact of low carbon concentrations on the electrical properties of highly boron doped SiGe layers [J].

Osten, HJ ;

Lippert, G ;

Gaworzewski, P ;

Sorge, R .

APPLIED PHYSICS LETTERS, 1997, 71 (11) :1522-1524

[9] Oxidation of Si1-yCy (O≤y≤0.02) strained layers grown on Si(001) [J].

Pressel, K ;

Franz, M ;

Kruger, D ;

Osten, HJ ;

Garrido, B ;

Morante, JR .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (03) :1757-1761

[10] Comparative study on dry oxidation of heteroepitaxial Si1-xGex and Si1-x-yGexCy on Si(100)(+) [J].

Xiang, J ;

Herbots, N ;

Jacobsson, H ;

Ye, P ;

Hearne, S ;

Whaley, S .

JOURNAL OF APPLIED PHYSICS, 1996, 80 (03) :1857-1866

← 1 →