MEMS switches fabrication using photoresist as a sacrificial layer

被引:3
作者
Molinero, David [1 ]
Castaner, Luis [1 ]
机构
[1] Univ Politecn Cataluna, Micro & Nano Elect Grp MNT, ES-08034 Barcelona, Spain
来源
PROCEEDINGS OF THE 2009 SPANISH CONFERENCE ON ELECTRON DEVICES | 2009年
关键词
D O I
10.1109/SCED.2009.4800486
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper describes a reliability study of the micro-electromechanical system fabrication with a photoresist layer used as sacrificial layer with an aluminum beam deposited by means of RF sputtering method. This work reports changes of the roughness and planarity of the sacrificial layer beneath the aluminum film following the sputtering deposition. Such changes may be attributed to the alteration of the photoresist properties due principally to the outgassing of hydrogen by decomposition of C-H bonds under argon plasma. A safe deposition parameters area was identified where the photoresist layer keeps its properties and may be used as sacrificial layer.
引用
收藏
页码:281 / 284
页数:4
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