Fabrication of p-CuO/n-ZnO heterojunction diode via sol-gel spin coating technique

被引：75

作者：

Prabhu, Rajeev R. ^{[1
]}

Saritha, A. C. ^{[1
]}

Shijeesh, M. R. ^{[1
]}

Jayaraj, M. K. ^{[1
,2
]}

机构：

[1] Cochin Univ Sci & Technol, Dept Phys, Nanophoton & Optoelect Devices Lab, Kochi 682022, Kerala, India

[2] Cochin Univ Sci & Technol, Ctr Adv Mat, Kochi 682022, Kerala, India

来源：

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS | 2017年 / 220卷

关键词：

p-CuO; n-ZnO; Solution-process; Heterojunction diode; THIN-FILMS; COPPER-OXIDE; OPTICAL-PROPERTIES; ELECTROCHEMICAL PERFORMANCE; NANOWIRE ARRAYS; NANOROD ARRAYS; CUPROUS-OXIDE; CUPRIC OXIDE; NANOSTRUCTURES; TEMPERATURE;

D O I：

10.1016/j.mseb.2017.03.008

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report a facile all-solution approach for the growth of nanostructured p-CuO and n-ZnO thin films. The influence of annealing temperature on the physical properties of CuO and ZnO thin films was examined. XRD and Raman spectra depict the structural and phase purity of solution grown CuO and ZnO films. The electrical as well as the optical properties of thin films were also studied. The average optical transmission of CuO and ZnO thin films in the visible spectral region was found to be above 80 and 95% respectively. Band gap energy variations on annealing temperature were investigated for CuO as well as ZnO films. Surface morphology analyzed by FESEM shows that the films are very smooth. All solution grown p-n heterojunction using p-CuO and n-ZnO films was fabricated in the structure ITO/n-ZnO/p-CuO/Au which showed rectification behavior with a turn on voltage of 2.5 V and an ideality factor of 3.15. (C) 2017 Elsevier B.V. All rights reserved.

引用

页码：82 / 90

页数：9

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