Hydrogen distribution in the vicinity of dangling bonds in hydrogenated amorphous silicon (a-Si:H)

被引：11

作者：

Fehr, M. ^{[1
]}

Schnegg, A. ^{[1
]}

Teutloff, C. ^{[2
]}

Bittl, R. ^{[2
]}

Astakhov, O. ^{[3
]}

Finger, F. ^{[3
]}

Rech, B. ^{[1
]}

Lips, K. ^{[1
]}

机构：

[1] Helmholtz Zentrum Berlin Mat & Energie, Inst Silizium Photovolta, D-12489 Berlin, Germany

[2] Free Univ Berlin, Fachbereich Phys, D-14195 Berlin, Germany

[3] Forschungszentrum Julich, Inst Energy Res Photovolta, D-52425 Julich, Germany

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2010年 / 207卷 / 03期

关键词：

NUCLEAR DOUBLE-RESONANCE; ELECTRON-SPIN-RESONANCE; ECHO ENVELOPE-MODULATION; PULSED ENDOR; DEFECTS; HYPERFINE; SPECTRA; MATRIX;

D O I：

10.1002/pssa.200982876

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have investigated the distribution of H atoms around native dangling bonds in a-Si:14 by electron-nuclear double resonance (ENDOR). In contrast to previous electron spin echo envelope modulation (ESEEM) studies [Isoya et al., Phys. Rev. B 47(12), 7013-7024 (1993)] we find that the distance between H atoms and dangling-bond defects can be well below r=3 angstrom. Our experimental data suggest that the H distribution is continuous and homogeneous and there is no indication for a short-range order between H atoms and dangling bonds. This work is a first step toward the investigation of the H distribution around light-induced defects to test models predicting the immediate proximity of H and defects. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：552 / 555

页数：4

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