Solar-Blind Photodetector Based on Single Crystal Ga2O3 Film Prepared by a Unique Ion-Cutting Process

被引：34

作者：

Ren, Qinghua ^{[1
,3
]}

Xu, Wenhui ^{[1
]}

Shen, Zhenghao ^{[1
,2
]}

You, Tiangui ^{[1
]}

Liu, Qiang ^{[1
]}

Liu, Chenhe ^{[1
]}

Zhao, Lantian ^{[1
,2
]}

Chen, Lingli ^{[1
,2
]}

Yu, Wenjie ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China

[2] Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China

[3] Univ Shanghai, Sch Microelect, Shanghai 200444, Peoples R China

来源：

ACS APPLIED ELECTRONIC MATERIALS | 2021年 / 3卷 / 01期

关键词：

Ga2O3; photodetector; ion-cutting; single crystal; MSM structure; BETA-GA2O3; THIN-FILMS; ULTRAVIOLET PHOTODETECTORS; GROWTH; FABRICATION; PERFORMANCE; SUBSTRATE; DETECTORS; LAYER; SI; NANOSTRUCTURES;

D O I：

10.1021/acsaelm.0c00990

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A solar-blind photodetector based on single crystal beta-Ga2O3 thin film transferred on a SiC substrate with an Al2O3 buffer layer was prepared by a unique ion-cutting process. The structure and micromorphology of the transferred single crystal Ga2O3 film was characterized by X-ray diffraction, X-ray photoelectron spectroscopy, and scanning electron microscopy, respectively. Then, a photodetector with a metal-semiconductor-metal (MSM) structure was fabricated. The photodetector performance of the MSM photodetector cells based on the ion-cutting single crystal Ga2O3 thin film reveals an excellent solar-blind photodetector performance such as high spectra selectivity, extremely low dark current (28.7 pA at 10 V), high photocurrent (27.4 nA at 10 V), high sensitivity to 254 nm UV light with a photocurrent-to-dark current ratio of 953, relatively fast response time, and excellent stability. Furthermore, the inner mechanism was systematically discussed. This work not only paves a way to fabricate high-performance photodetectors based on single crystal semiconductor films but also opens up the opportunities of Ga2O3 single crystal film for a variety of photonic and electronic applications in optical positioning, tracking, imaging, and communications.

引用

页码：451 / 460

页数：10

共 70 条

[1] Ultrahigh Performance of Self-Powered β-Ga2O3 Thin Film Solar-Blind Photodetector Grown on Cost-Effective Si Substrate Using High-Temperature Seed Layer [J].