Charge Carrier Relaxation Processes in TbAs Nanoinclusions in GaAs Measured By Optical-Pump THz-Probe Transient Absorption Spectroscopy

被引：0

作者：

Vanderhoef, Laura R. ^{[1
]}

Azad, Abul K. ^{[2
]}

Bomberger, Cory C. ^{[3
]}

Chowdhury, Dibakar Roy ^{[2
]}

Chase, D. Bruce ^{[3
]}

Taylor, Antoinette J. ^{[2
]}

Zide, Joshua M. O. ^{[3
]}

Doty, Matthew F. ^{[1
,3
]}

机构：

[1] Univ Delaware, Dept Phys & Astron, Newark, DE 19716 USA

[2] Los Alamos Natl Lab, Los Alamos, NM USA

[3] Univ Delaware, Dept Mat Sci & Engn, Newark, DE 19716 USA

来源：

2014 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | 2014年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

By analyzing how carrier relaxation rates depend on pump fluence and sample temperature, we conclude that states of TbAs embedded in GaAs are saturable. This suggests the existence of a bandgap for TbAs nanoparticles.

引用

页数：2

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