Charge Carrier Relaxation Processes in TbAs Nanoinclusions in GaAs Measured By Optical-Pump THz-Probe Transient Absorption Spectroscopy

被引：0
|
作者：
Vanderhoef, Laura R. [1 ]
Azad, Abul K. [2 ]
Bomberger, Cory C. [3 ]
Chowdhury, Dibakar Roy [2 ]
Chase, D. Bruce [3 ]
Taylor, Antoinette J. [2 ]
Zide, Joshua M. O. [3 ]
Doty, Matthew F. [1 ,3 ]
机构：
[1] Univ Delaware, Dept Phys & Astron, Newark, DE 19716 USA
[2] Los Alamos Natl Lab, Los Alamos, NM USA
[3] Univ Delaware, Dept Mat Sci & Engn, Newark, DE 19716 USA
来源：
2014 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | 2014年
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D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
By analyzing how carrier relaxation rates depend on pump fluence and sample temperature, we conclude that states of TbAs embedded in GaAs are saturable. This suggests the existence of a bandgap for TbAs nanoparticles.
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页数：2
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