Nonmetallic Broadband Visible-Light Absorbers With Polarization and Incident Angle Insensitivity

被引:4
作者
Yu, Yue [1 ]
Yu, Zejie [1 ]
Sun, Xiankai [1 ]
机构
[1] Chinese Univ Hong Kong, Dept Elect Engn, Shatin, Hong Kong, Peoples R China
来源
IEEE PHOTONICS JOURNAL | 2020年 / 12卷 / 06期
关键词
Visible-light absorbers; III-V semiconductors; perfect optical absorption; thin films; metagratings;
D O I
10.1109/JPHOT.2020.3029213
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We have proposed and theoretically analyzed nonmetallic broadband visiblelight absorbers based on alternating SiO2/InAs thin films on SiO2 substrate. Compared with the conventional absorbers, the proposed SiO2/InAs structure can achieve excellent absorption within a smaller volume. The average absorption can exceed 97% in the wavelength range of 300-850 nm. With a two-dimensional InAs grating atop, the device can achieve the average absorption of >92% with insensitivity to light polarization and incident angles. Due to the advantages of broadband and near-unity absorption, polarization and incident angle insensitivity, controllable and mature fabrication processes, the proposed visible-light absorbers will find wide applications in solar energy harvesting, thermal emission, and water splitting.
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页数:7
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