SiGe HBT modeling for mm-wave circuit design

被引：0

作者：

Pawlak, Andreas ^{[1
]}

Lehmann, Steffen ^{[1
]}

Sakalas, Paulius ^{[1
,2
]}

Krause, Julia ^{[1
]}

Aufinger, Klaus ^{[3
]}

Ardouin, Bertrand ^{[4
]}

Schroter, Michael ^{[1
,5
]}

机构：

[1] Tech Univ Dresden, Dresden, Germany

[2] Ctr Phys Sci & Technol, Vilnius, Lithuania

[3] Infineon Technol, Munich, Germany

[4] XMOD Technol, Bordeaux, France

[5] Univ Calif San Diego, La Jolla, CA 92093 USA

来源：

2015 IEEE BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING (BCTM) | 2015年

关键词：

ELECTRICAL PERFORMANCE LIMITS; BIPOLAR-TRANSISTOR; CHARGE;

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

An overview on the compact modeling activities within the DOTSEVEN project is given. Issues such as geometry scaling, substrate coupling and thermal effects as well as HICUM Level 2 features enabling the accurate modeling of the linear and non-linear characteristics of the latest generation of SiGe HBTs are discussed. Furthermore, experimental results for the most important DC and small-signal characteristics as well as selected examples for non-linear modeling of the most advanced SiGe HBTs from two different technologies are presented. Model verification issues related to limited on-wafer high-frequency measurement capability and the accurate calibration at multi-hundred GHz are briefly touched.

引用

页码：149 / 156

页数：8

共 35 条

[1]

Ardouin B., 2015, CSICS 2015 IN PRESS

[2]

DOTFIVE, 2011, DOTFIVE 0 5 TER SIL

[3]

DOTSEVEN, 2013, DOTSEVEN 0 7 TER SIL

[4] Advanced Heterojunction Bipolar Transistor for Half-THz SiGe BiCMOS Technology [J].

Fox, Alexander ;

Heinemann, Bernd ;

Ruecker, Holger ;

Barth, Rainer ;

Fischer, Gerhard G. ;

Wipf, Christian ;

Marschmeyer, Steffen ;

Aufinger, Klaus ;

Boeck, Josef ;

Boguth, Sabine ;

Knapp, Herbert ;

Lachner, Rudolf ;

Liebl, Wolfgang ;

Manger, Dirk ;

Meister, Thomas F. ;

Pribil, Andreas ;

Wursthorn, Jonas .

IEEE ELECTRON DEVICE LETTERS, 2015, 36 (07) :642-644

[5] Systematic Compact Modeling of Correlated Noise in Bipolar Transistors [J].

Herricht, Joerg ;

Sakalas, Paulius ;

Ramonas, Mindaugas ;

Schroter, Michael ;

Jungemann, Christoph ;

Mukherjee, Anindya ;

Moebus, Kai Erik .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2012, 60 (11) :3403-3412

[6] Modeling Nonquasi-Static Effects in SiGe HBTs [J].

Jacob, Jobymol ;

DasGupta, Amitava ;

Schroeter, Michael ;

Chakravorty, Anjan .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2010, 57 (07) :1559-1566

[7] Towards 0.7 Terahertz Silicon Germanium Heterojunction Bipolar Technology - The DOTSEVEN project [J].

Lachner, R. .

SIGE, GE, AND RELATED COMPOUNDS 6: MATERIALS, PROCESSING, AND DEVICES, 2014, 64 (06) :21-37

[8]

Lehmann S., 2011, 2011 IEEE 11th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF 2011), P113, DOI 10.1109/SIRF.2011.5719339

[9] Characterization of the Static Thermal Coupling Between Emitter Fingers of Bipolar Transistors [J].

Lehmann, Steffen ;

Zimmermann, Yves ;

Pawlak, Andreas ;

Schroeter, Michael .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2014, 61 (11) :3676-3683

[10]

Malz S., INT J MICRO IN PRESS

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