Crystalline orientation effects on conical structure formation in femtosecond laser irradiation of silicon and germanium

被引:15
作者
Crawford, T. H. R. [1 ]
Botton, G. A. [2 ,3 ]
Haugen, H. K. [1 ,2 ,4 ,5 ]
机构
[1] McMaster Univ, Dept Engn Phys, Hamilton, ON L8S 4L7, Canada
[2] McMaster Univ, Brockhouse Inst Mat Res, Hamilton, ON L8S 4L7, Canada
[3] McMaster Univ, Dept Mat Sci & Engn, Hamilton, ON L8S 4L7, Canada
[4] McMaster Univ, Dept Phys & Astron, Hamilton, ON L8S 4L7, Canada
[5] McMaster Univ, Ctr Emerging Device Technol, Hamilton, ON L8S 4L7, Canada
基金
加拿大自然科学与工程研究理事会;
关键词
Femtosecond pulsed laser; Laser-material interactions; Silicon; Germanium; Surface morphology; AMORPHIZATION; GROWTH; MICROSCOPY; DEPENDENCE; PHOSPHIDE; ABLATION; PULSES; ARRAYS; GE; SI;
D O I
10.1016/j.apsusc.2009.09.107
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Irradiation of Si(1 0 0), Si(1 1 1), Si(1 1 0), Ge(1 0 0), and Ge(1 1 1) is compared for 150 fs, 800 nm wavelength pulses in a rough vacuum atmosphere. The surface crystalline orientation of the material is found to affect the final morphology, with (1 1 1)- and (1 1 0)-surface orientations exhibiting a much higher tendency for conical structure formation under multiple-pulse irradiation. Using cross-sectional transmission electron microscopy, the structures on Si(1 1 1) are found to have primarily crystalline cores with the same crystalline orientation as the substrate. The results show that the crystalline orientation of the target should be considered in laser machining applications. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码:1749 / 1755
页数:7
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