Simulation of nano-CMOS devices: From atoms to architecture

被引：5

作者：

Asenov, A. ^{[1
]}

Brown, A. R. ^{[1
]}

Cheng, B. ^{[1
]}

Watling, J. R. ^{[1
]}

Roy, G. ^{[1
]}

Alexander, C. ^{[1
]}

机构：

[1] Univ Glasgow, Dept Elect & Elect Engn, Device Modelling Grp, Glasgow G12 8LT, Lanark, Scotland

来源：

NANOTECHNOLOGY FOR ELECTRONIC MATERIALS AND DEVICES | 2007年

关键词：

D O I：

10.1007/978-0-387-49965-9_7

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：257 / +

页数：4

共 41 条

[11] ROUGHNESS ANALYSIS OF SI/SIGE HETEROSTRUCTURES [J].

FEENSTRA, RM ;

LUTZ, MA ;

STERN, F ;

ISMAIL, K ;

MOONEY, PM ;

LEGOUES, FK ;

STANIS, C ;

CHU, JO ;

MEYERSON, BS .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (04) :1608-1612

[12]

Frank D. J., 1999, S VLSI CIRC DIG PAP, P171

[13]

FROMHOLD AJ, 1981, QUANTUM MECH APPL PH

[14] SURFACE-ROUGHNESS AT THE SI(100)-SIO2 INTERFACE [J].

GOODNICK, SM ;

FERRY, DK ;

WILMSEN, CW ;

LILIENTAL, Z ;

FATHY, D ;

KRIVANEK, OL .

PHYSICAL REVIEW B, 1985, 32 (12) :8171-8186

[15] A novel approach for introducing the electron-electron and electron-impurity interactions in particle-based simulations [J].

Gross, WJ ;

Vasileska, D ;

Ferry, DK .

IEEE ELECTRON DEVICE LETTERS, 1999, 20 (09) :463-465

[16] SELF-CONSISTENT ITERATIVE SCHEME FOR 1-DIMENSIONAL STEADY STATE TRANSISTOR CALCULATIONS [J].

GUMMEL, HK .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1964, ED11 (10) :455-&

[17]

Hockney R. W., 1981, Computer Simulation Using Particles

[18]

Jin S, 2003, 2003 IEEE INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES, P263

[19]

Jin S., 2004, J SEMICOND TECH SCI, V4, P32

[20]

Kaya S, 2001, SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES 2001, P78

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