Simulation of nano-CMOS devices: From atoms to architecture

被引：5

作者：

Asenov, A. ^{[1
]}

Brown, A. R. ^{[1
]}

Cheng, B. ^{[1
]}

Watling, J. R. ^{[1
]}

Roy, G. ^{[1
]}

Alexander, C. ^{[1
]}

机构：

[1] Univ Glasgow, Dept Elect & Elect Engn, Device Modelling Grp, Glasgow G12 8LT, Lanark, Scotland

来源：

NANOTECHNOLOGY FOR ELECTRONIC MATERIALS AND DEVICES | 2007年

关键词：

D O I：

10.1007/978-0-387-49965-9_7

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：257 / +

页数：4

共 41 条

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